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Based on the Gummel-Poon (GP) model, a simple and physical-based large-signal model for GaInP/GaAs heterojunction bipolar transistors (HBTs) is presented in this paper. We improve the current and transit time model by considering the potential spike effect and negative differential mobility. Different from the UCSD HBT and AgilentHBT models, only 46 parameters are used in our model. The DC characteristics...
The design and analysis of submillimeter wave balanced frequency tripler using commercially available DBES105a GaAs Schottky barrier diodes is reported in this paper. The circuit design, simulation and optimization of the tripler are carried out by using HFSS and ADS. The tripler reported here adopted microstrip line as the transmission line. A new material named Fluorphlogopite Mica is the first...
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