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The interfacial tunable band alignment of heterostructures is coveted in device design and optimization of device performance. As an intentional approach, alloying allows band engineering and continuous band‐edge tunability for low‐dimensional semiconductors. Thus, combining the tunability of alloying with the band structure of a heterostructure is highly desirable for the improvement of device characteristics...
In article number 2006908, Zhongming Wei and co‐workers show how the nearly intrinsic van der Waals interface of MoS2(1−x)Se2x/SnS2(1−y)Se2y enables the identification of the intrinsic behaviors of heterostructures, such as type‐II band alignment with large band offset, effective charge transfer, and enhanced transport properties.
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