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An inverted architecture of quantum dot solar cells is demonstrated by introducing a novel ZnO method on top of the PbS CQD film. Improvements in device characteristics stem from constructive optical interference from the ZnO layer that enhances absorption in the PbS CQD layer. Outstanding diode characteristics arising from a superior PbS/ZnO junction provide a further electronic advantage.
A gas sensor based on PbS colloidal quantum dots (CQDs) is constructed on a paper substrate, yielding flexible, rapid‐response NO2 gas sensors, fabricated from the solution phase. The devices are highly sensitive and fully recoverable at room temperature, which is attributed to the excellent access of gas molecules to the CQD surface, realized by surface ligand removal, combined with the desirable...
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