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We report the first demonstration of source/drain (S/D) doping using tin (Sn) doped spin-on-glass (SOG) on Ga2O3 power MOSFET. The effectiveness of SOG doping is verified by a comparative experiment on semi-insulating Ga2O3 substrates. A specific contact resistance of $\rho _{c}= 2.1\pm 1.4\times 10^{-5}\,\,\Omega \cdot $ cm2 is obtained to the SOG doped layer. The thermal diffusion behavior of Sn...
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