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Compact and robust electrostatic discharging (ESD) protection structures are critical to on-chip ESD protection for ICs. Conventional in-Si ESD protection structures have many disadvantages. A new above-IC graphene NEMS (gNEMS) switch is reported as an ESD protection structure, which features almost zero leakage and robust ESD protection. A systematic characterization of gNEMS ESD structures was conducted...
Above-IC graphene NEMS (gNEMS) switch electrostatic discharge (ESD) protection structures are designed to replace traditional in-Si PN-based ESD structures. Built in CMOS back-end without PN junctions, gNEMS eliminates ESD-induced parasitics (leakage, capacitance, noise) inherent to PN junctions. Transient characterization of gNEMS ESD structures were conducted by transmission line pulsing (TLP) measurement...
Both novel ESD structures and robust ESD interconnects are critical to on-chip ESD protection designs [1-3], which are characterized by transient transmission line pulse (TLP) testing for human body model (HBM). Compared to metal lines (Al & Cu), graphene ribbons (GR) has great potential as robust ESD interconnects due to its excellent thermal and mechanical properties. We report the first systematic...
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