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Compact and robust electrostatic discharging (ESD) protection structures are critical to on-chip ESD protection for ICs. Conventional in-Si ESD protection structures have many disadvantages. A new above-IC graphene NEMS (gNEMS) switch is reported as an ESD protection structure, which features almost zero leakage and robust ESD protection. A systematic characterization of gNEMS ESD structures was conducted...
Above-IC graphene NEMS (gNEMS) switch electrostatic discharge (ESD) protection structures are designed to replace traditional in-Si PN-based ESD structures. Built in CMOS back-end without PN junctions, gNEMS eliminates ESD-induced parasitics (leakage, capacitance, noise) inherent to PN junctions. Transient characterization of gNEMS ESD structures were conducted by transmission line pulsing (TLP) measurement...
Conventional on-chip electrostatic discharge (ESD) protection structures for integrated circuits (ICs) rely on in-Si p-n-junction-based devices, which have many inherent disadvantages unsuitable for ICs at nanonodes. This letter reports a novel above-IC graphene-based nanoelectromechanical system (gNEMS) transient switch ESD protection mechanism and structure. Transmission line pulse testing shows...
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