The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Ni 2 Si, NiSi and NiSi 2 contacts were prepared on n-type 4H– and 6H–SiC(0001) by deposition of Ni and Si multilayers in the respective stoichiometry after high-temperature annealing, as well as pure Ni contacts. After annealing, the individual contacts were analyzed by Raman spectroscopy and electrical property measurements. Contact structures were then etched-off and subsequently...
Ni, Ni 2 Si and Pd contacts were prepared on n-type 4H-SiC and annealed in the temperature range of 750–1150°C. The annealed contacts were analyzed before and after acid etching, and different features were found in unetched and etched contacts. Carbon left on the SiC surface after the acid etching of Ni 2 Si contacts annealed at 960°C was highly graphitized. In nickel contacts, the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.