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MBE growth of ZnSxSe1−x thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging from 270°C to 330°C. The XRD σ/2σ spectra resulted from these films indicated that the as-grown polycrystalline ZnSxSe1−x thin films had a preferred orientation along the (111) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD layer...
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