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With the commercial introduction of wide bandgap power devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) in the last few years, the high power and high frequency power electronics applications have gained more attention. The fast switching speed and high temperature features of SiC MOSFET break the limit of the traditional silicon MOSFET. However, the EMI problem under high dI/dt and...
A 1200V SiC MOSFET-gate driver integrated half-bridge (HB) module using direct bonded copper (DBC) substrate is designed and fabricated for noise free high frequency operation. The layout of the integrated module is carefully designed to eliminate the EMI problem under high switching speed. Due to the significantly reduced stray inductance, the external gate driver resistance can be chosen as zero...
With the commercialization of wide bandgap power devices such as SiC MOSFETs and JBS diodes, power electronics converters used in the harsh environments such as hybrid electric vehicles and aerospace attract more and more attentions. The low loss, high temperature and fast switching capabilities are utilized in the converters to improve the power density and efficiency. However, the EMI problem caused...
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