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We analyzed the cathodoluminescence of zinc‐blende GaN/AlN quantum dots grown by two different methods. Method A being droplet epitaxy, a vapor liquid solid process and method B being Stranski‐Krastanov growth. At an equal quantum dot density of 1011 cm‐2, droplet epitaxy grown quantum dots have shown a luminescence intensity which was more than one order of magnitude higher than the one of Stranski‐Krastanov...
We report an anisotropic formation of defects in cubic GaN grown on nano‐patterned 3C‐SiC/Si (001) by molecular beam epitaxy. Nano‐patterning of 3C‐SiC/Si (001) is achieved by nanosphere lithography and a reactive ion etching process. Atomic force microscopy and scanning electron microscopy show that the selective‐area‐grown cubic GaN nucleates in two structurally different domains, which most probably...
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