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In this letter, we report the state-of-the-art micro wave noise performance of discrete 0.15-μm-gate-length field plated (FP) GaN HEMTs. The FP GaN HEMTs yielded a peak fτ/fmax of 60 GHz/150 GHz at Vds = 10 V. An fmax of 230 GHz was obtained at Vds = 20 V. At 2.5 V, the source-drain bias and dc power dissipation of 200 mW/mm, a minimum noise figure (NFmin) of 0.89 dB, and an...
Stack-transistor structure is often used in RF applications for higher power handling capability and/or isolation. LDMOSFET may provide similar advantages with smaller device area and lower series resistance. The purpose of this work is extracting the RF parameters of a LDMOSFET and design a RF switching circuit with these parameters. The design trade-off between LDMOS and CMOS technologies was discussed...
A new structure of high-voltage junction FET was designed by using a 40 V LDMOS technology without additional mask in this process. This JFET also has the same breakdown capability as the LDMOSFET. The pinch-off voltage of the JFET was determined by layout, the n-well opening. The pinch-off voltage was almost unchanged with temperature variation. This JFET can be used in circuit applications with...
In this talk, we present state-of-the-art performance of top-gated graphene n-FETs and p-FETs fabricated with epitaxial graphene layers grown on SiC and Si substrates.
We will present recent development of graphene FET technology on a wafer scale, including epitaxial graphene growth, device fabrication and characterization. The epitaxial growth of graphene on 2-inch wafers were fabricated via graphitization of Si-face SiC(0001) substrates. The sheet electron carrier density of these layers were typically 10-13 /cm2 at room temperature and had mobility of ~ 1500...
In this paper, the recent development of graphene FETs on a wafer scale, including DC and RF performance is presented. The epitaxial growth of graphene is under development on two-inch wafers using both Si-sublimation of Si or C-face SiC(0001) substrates and graphene growth using MBE. The quality of graphene is characterized by Raman spectroscopy and TEM (transmission electron microscopy). The graphene...
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