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In this talk, we present recent progress in epitaxial graphene n-MOSFETs and p-MOSFETs on both SiC and Si substrates for graphene-on-SiC and graphene-on-Si technologies. Both graphene MOSFETs were fabricated in a self-aligned manner on 75 mm wafers and exhibited gate-controlled ambipolar characteristics. For the graphene MOSFETs on SiC substrates, the graphene was grown by Si-sublimation of Si-face...
We will present recent development of graphene FET technology on a wafer scale, including epitaxial graphene growth, device fabrication and characterization. The epitaxial growth of graphene on 2-inch wafers were fabricated via graphitization of Si-face SiC(0001) substrates. The sheet electron carrier density of these layers were typically 10-13 /cm2 at room temperature and had mobility of ~ 1500...
In this paper, the recent development of graphene FETs on a wafer scale, including DC and RF performance is presented. The epitaxial growth of graphene is under development on two-inch wafers using both Si-sublimation of Si or C-face SiC(0001) substrates and graphene growth using MBE. The quality of graphene is characterized by Raman spectroscopy and TEM (transmission electron microscopy). The graphene...
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