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Stack-transistor structure is often used in RF applications for higher power handling capability and/or isolation. LDMOSFET may provide similar advantages with smaller device area and lower series resistance. The purpose of this work is extracting the RF parameters of a LDMOSFET and design a RF switching circuit with these parameters. The design trade-off between LDMOS and CMOS technologies was discussed...
We report W-band GaN MMIC's that produce 96% more power at a frequency of 88 GHz in continuous wave (CW) operation than the highest power reported in this frequency band for the best competing solid state technology, the InP HEMT. W-band power module containing a single three stage GaN MMIC chip with 600 μm wide output stage produced over 842 mW of output power in CW-mode, with associated PAE of 14...
In this talk, we present state-of-the-art performance of top-gated graphene n-FETs and p-FETs fabricated with epitaxial graphene layers grown on SiC and Si substrates.
We report a robust Q-band GaN MMIC LNA operating in the 42-47GHz frequency range using a 0.15 mum T-gate process. The measured noise figure of the MMIC is less than 3.1 dB over the band of interest and the NF has a minimum of 2.9 dB at a frequency of 45.5 GHz. The MMIC gain is between 19 and 20 dB across the band and the input return loss of the MMIC is less than -10 dB. The measured OIP3 of the MMIC...
High data rate E-band (71 GHz- 76 GHz, 81 GHz - 86 GHz, 92 GHz - 95 GHz) communication systems will benefit from power amplifiers that are more than twice as powerful than commercially available GaAs pHEMT MMICs. We report development of three stage GaN MMIC power amplifiers for E-band radio applications that produce 500 mW of saturated output power in CW mode and have > 12 dB of associated power...
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