The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, we analyze the power drive of a Doherty power amplifier (PA), and introduce a technique for proper input dividing without a coupler. For the proper Doherty operation, we place a phase compensation circuit at the input of the carrier amplifier. We also propose an output matching of Doherty PA to reduce the number of matching components, and to match the output impedances to enhance efficiency...
Background: III-V semiconductors are one of the most promising device candidates for future high-speed, low-power logic applications due to their high electron mobility. Recently, high performance III-V n-FETs have been demonstrated. However, for CMOS logic, there is a significant challenge of identifying high mobility III-V p-FET candidates. Strain in silicon initially in Si layers on relaxed SiGe...
The spin of an electron in an InAs/GaAs quantum-dot molecule is optically prepared and nondestructively measured through trion-triplet states. With two-laser transmission spectroscopy we demonstrate both simultaneously, something not previously accomplished in single quantum dots.
We have developed new band to band tunneling (BTBT) model, which captures band structure information, all possible transitions between different valleys, energy quantization and quantized density of states (DOS). Minimum standby off-state currents (IOFF,MIN) are investigated in double gate (DG) MOSFETs with various high mobility materials, like GaAs, InAs, Ge and strained Si/Ge (s-Si/s-Ge) using the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.