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In this paper, we report results of a study of SiNx thin films for surface passivation of HgCdTe epitaxial layers. The hydrogenated amorphous SiNx films under study were deposited by a SENTECH SI500D inductively coupled plasma-enhanced chemical vapor deposition (ICPECVD) system with a high-density and low-ion-energy plasma source at relatively low substrate temperatures (80°C to 100°C). A series...
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