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We have designed and fabricated novel, free-standing GaAs nano-whisker (NW) detectors and demonstrated their femtosecond photoresponse. The NW device was characterized using a femtosecond, time-resolved (THz bandwidth) electro-optic sampling method. Electrical photoresponse transients as short as 600 fs were recorded and their frequency-domain analysis indicated that the intrinsic NW photodetector...
GaAs/Ga<;sub>1-x<;/sub>Al<;sub>x<;/sub>As(0<;x<;1.0) multilayer structure is widely used in photodetector, laser and solar cell. Due to the lattice parameter difference between GaAs and Ga<;sub>1-x<;/sub>Al<;sub>x<;/sub>As is very small(less than 0.15% at 300K), Ga<;sub>1-x<;/sub>Al<;sub>x<;/sub>As as a buffer layer in NEA...
In this paper, two comparative experiments have been carried out to study Cs' effect on the stability of GaAs photocathode. Experiments show that Cs of a certain concentration helps extend the life of photocathode, and the decay of photocathode is not caused by Cs desorption but oxide adsorption.
With the limitation of epitaxial growth technique, the approximately exponential-doping structure is actually a special kind of gradient-doped structure, in which the doping concentration in the active-layer of the III-V photocathode varies exponentially from bulk to surface. This doping structure can result in a linearly downward band structure which helps form a constant built-in electric fields...
In view of the important application of GaAs and GaN photocathodes in electron sources [1,2], the difference in the photoemission behavior, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes has been investigated using the multi-information measurement system. The reflection-mode GaAs and GaN photocathode samples both were grown by...
To study the effect surface defects imposed on NEA GaAs photocathode, a surface analysis instrument shown in Fig. 1 has been designed, which is composed of a microimager, a 2-D displacement platform, an auto-focus equipment, a computer.
GaAs-channel MOSFETs employing InAlP native oxide gate dielectrics and achieving record microwave performance are reported. Devices with 1 mum gate length demonstrate measured ft's of 17.0 GHz with fmax's of 74.8 GHz. Improved RF performance is obtained by vertical scaling of the device heterostructure to incorporate a 7.5 nm thick gate oxide layer. Despite the thin InAlP native oxide gate dielectric...
Examination of experimental basis of a new mechanism for ''re-entrant'' bahaviour in reflection high energy electron diffraction intensity oscillations during homoepitaxial growth of GaAs on the (111)A surface has shown that surface morphology continue to change periodically under all the growth conditions. The observed re-entrant behaviour under specific diffraction conditions can be explained in...
Reflection high-energy electron diffraction (RHEED) intensity oscillations recorded along high-symmetry azimuths during the homoepitaxial growth of GaAs(111)A thin films by molecular-beam epitaxy show reentrant behaviour, with oscillations occurring at high and low temperatures but disappearing at intermediate values over a ~10 o C temperature window. In off-symmetry azimuths, however, the...
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