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2D atomic sheets of transition metal dichalcogenides (TMDs) have a tremendous potential for next‐generation optoelectronics since they can be stacked layer‐by‐layer to form van der Waals (vdW) heterostructures. This allows not only bypassing difficulties in heteroepitaxy of lattice‐mismatched semiconductors of desired functionalities but also providing a scheme to design new optoelectronics that can...
In article number 1805656, Rui Chen, Liyuan Zhang, Youpin Gong, and co‐workers develop an h‐BN/MoTe2/graphene/SnS2/h‐BN van der Waals heterostructure to realize an ultrahigh‐sensitivity broadband (405–1550 nm) photodetector, due to its unique advantages for high‐efficiency light absorption and exciton dissociation. Graphene plays a key role in enhancing the sensitivity and broadening the spectral...
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