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We report a “sharp corner” phenomenon in the diodetype current-voltage (I-V) curves of the Electrolyte-Oxide-Semiconductor (EOS) structure which is made up of Cu-ion solution, SiO2 layer and Si substrate. The phenomenon just appears when the voltage scans from positive value to negative value due to the particularity in electrochemical interaction between Cu ions and Si-SiO2 system. Two kinds of Cu-ion...
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