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The ideality factor of a 2 μm InGaSb/AlGaAsSb quantum well laser is investigated. The total ideality factor comes mainly from the central p-n junction and two metal-semiconductor junctions. It decreases from 4.0 to 3.3 when the temperature is increased from 20 to 80 oC.
HVDC cables play a vital role in the power transmission system for renewable energy and global power trade. Nowadays, the crosslinked polyethylene (XLPE) extruded cables have been widely applied in power industry due to the superior performance on the thermo-mechanical properties and dielectric properties. The low volume conductivity and the minimized space charge accumulation are the two key requirements...
Z-type hexaferrite Sr3Co2Fe24O41 (SCFO) has been reported to exhibit the room temperature mag-netoelectric effect with a very high magnetoelectric susceptibility compared with other reported single phase materials [1-3]. The reported studies on the SCFO are focused on its magnetoelectric coupling and high frequency magnetic properties. A systematical understanding on the high frequency electrical...
Ta/Ta2O5 RRAMs show self-compliant characteristics in some Ta or Ta2O5 thickness range but Ti/TaOx RRAMs always need current compliance due to totally consumption of SC conduction layer.
In summary, a novel RRAM with the structure of Cu/SixOyNz/W was first fabricated and its characteristics are thoroughly investigated. The new device exhibited low switching voltages and low reset currents, demonstrating its potential for low-power applications. Repeatable unipolar resistive switching characteristics in terms of high off/on resistance ratio and good retention capability were observed...
In this work, an analytic study of DC characteristics based on the drift-diffusion approach has been performed for the InP/GaAsSb DHBTs. The current transport of InP/GaAsSb/InP DHBTs has been investigated focusing the device temperature dependence. Our simulation results show that, at room temperature, the DC characteristics of the InP/GaAsSb/InP DHBTs is similar to the conventional InP-based HBT...
Internal quantum efficiency (IQE) of InGaN-based ultraviolet light emitting diodes (LED) grown on patterned sapphire substrate (PSS) and flat sapphire were measured by photoluminescence and electroluminescence methods. The IQE improvement of PSS LED is significant.
Temperature-dependent electroluminescence efficiency of blue light-emitting diodes with different well widths is investigated. The efficiency droop phenomenon for LEDs at low temperature is dependent with electron overflow and non-uniform hole distribution within MQW region.
Summary form only given. We report results from an efficient new method for producing translationally cold (T<1 mK) potassium molecules in the ground X/sup 1//spl Sigma//sub g//sup +/ electronic state. We use the two-photon "R-transfer" scheme conceptually similar to a proposal by Band and Julienne (1995). First, ultracold potassium atoms in a MOT are photoassociated at long range to...
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