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In this paper transmission-mode GaN photocathodes was activated by Cs/O, its quantum efficiency curve and the factors which influenced the quantum efficiency mostly were studied. Transmission-mode GaN photocathodes was grown by Metal-Organic Chemical Vapor Deposition (MOCVD).
With the limitation of epitaxial growth technique, the approximately exponential-doping structure is actually a special kind of gradient-doped structure, in which the doping concentration in the active-layer of the III-V photocathode varies exponentially from bulk to surface. This doping structure can result in a linearly downward band structure which helps form a constant built-in electric fields...
In view of the important application of GaAs and GaN photocathodes in electron sources [1,2], the difference in the photoemission behavior, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes has been investigated using the multi-information measurement system. The reflection-mode GaAs and GaN photocathode samples both were grown by...
The traditional corrosion methods based on oxidizing and dissolving can't remove oxygen (O) and carbon (C) on GaN effectively. This is because GaN has stronger chemical stability, the strong oxidation chemical reagent like H2O2 can't oxidize GaN surface. In addition the oxide on GaN surface can't be dissolved effectively by the strong acid solution such as HCl or H2SO4. The depuration method for GaN...
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