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ZrN and Pt/Ru thin films have been grown by an automated ion beam sputter-deposition system. Both materials were evaluated for use as barrier layers (ZrN) and bottom electrodes (Pt/Ru) in dynamic random access memory (DRAM) applications. The ZrN films had resistivities on the order of 250–300 μω cm. The ZrN films were (002) oriented and were rather smooth with an average surface roughness of ±17 Å...
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