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We report novel FETs with a structure in which not only the top surface but also the side surfaces of island-shaped c-axis aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO) serving as a channel are surrounded by a gate electrode, that is, surrounded channel CAAC-IGZO FETs. The FETs maintained their favorable subthreshold characteristics even if the channel length was scaled down to approximately...
We propose Non-Volatile Oxide Semiconductor Random Access Memory (NOSRAM) that is a novel memory including a transistor using an oxide semiconductor, In-Ga-Zn Oxide. OS transistors feature extremely low leakage current of about 100-600 yA/μm (1 yA = 10-24 A) at 85°C for example, and are applicable to memory elements. Our prototype of a 1Mb NOSRAM has achieved 1012 write cycles, no need of erasing...
The authors have designed optimum 1/4- mu m-gate-length NMOSFETs with improved hot-electron immunity. The lithographies used were direct electron-beam and SR (synchrotron radiation) lithography. SR was used for the metallization. The threshold voltage of the NMOSFETs was determined over the whole range of operating temperatures. The fabricated E/E (enhancement mode/enhancement mode) ring oscillators...
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