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We report the world's smallest field effect transistors (FETs) with channel lengths of 32 nm including c-axis aligned crystalline (CAAC) In-Ga-Zn-O as their active layers, which achieve low off-state leakage currents. Furthermore, these FETs exhibit excellent subthreshold swing values despite having thick gate insulating film. The FET operation has been achieved owing to the 3D gate structure with...
We propose Non-Volatile Oxide Semiconductor Random Access Memory (NOSRAM) that is a novel memory including a transistor using an oxide semiconductor, In-Ga-Zn Oxide. OS transistors feature extremely low leakage current of about 100-600 yA/μm (1 yA = 10-24 A) at 85°C for example, and are applicable to memory elements. Our prototype of a 1Mb NOSRAM has achieved 1012 write cycles, no need of erasing...
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