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In this study, we proposed scalable trench-gate-self-aligned (TGSA) c-axis aligned crystalline In-Ga-Zn-Oxide field effect transistors (CAAC-IGZO FETs) formed by only three masks. We demonstrated that the 20-nm-node FETs with 11-nm-EOT exhibit good short-channel properties, high frequency, and low off-state current. The TGSA FETs can be candidates for key devices to realize super low power large-scale...
We report the world's smallest field effect transistors (FETs) with channel lengths of 32 nm including c-axis aligned crystalline (CAAC) In-Ga-Zn-O as their active layers, which achieve low off-state leakage currents. Furthermore, these FETs exhibit excellent subthreshold swing values despite having thick gate insulating film. The FET operation has been achieved owing to the 3D gate structure with...
We report novel FETs with a structure in which not only the top surface but also the side surfaces of island-shaped c-axis aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO) serving as a channel are surrounded by a gate electrode, that is, surrounded channel CAAC-IGZO FETs. The FETs maintained their favorable subthreshold characteristics even if the channel length was scaled down to approximately...
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