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A WR1.5 frequency multiplier circuit using standard CMOS 65nm technology is presented. Careful choice of device and its gate size leads to fair amount of output power compared to other expensive high performance semiconductor process. Accumulation-mode varactor device is chosen for its high non-linearity and gate size of the varactor is enlarged until self-resonance occur at fundamental frequency...
Mid-IR interband cascade lasers will be reviewed. Advantages include 3–6 μm spectral coverage, wallplug efficiency up to 18% when operated in cw mode at ambient temperature, and ultra-low threshold drive power.
We report a 7-stage narrow-ridge interband-cascade laser emitting at λ ≈ 3.5 µm that produces up to 592 mW of cw power, with a wallplug efficiency of 10.1% and M2 = 3.7 at T = 25 °C.
We report that various recent design modifications and optimizations have produced significant advances in the performance of interband cascade lasers (ICLs) for the mid-IR spectral band. Figure 1 illustrates the progression with time of ICL pulsed threshold current densities, as compared to some of the lowest reported results for quantum cascade lasers. All of the ICL devices were standard 150-µm-wide...
An MMIC amplifier operating at the highest reported frequency up to date for indium-phosphide double-heterojunction bipolar (DHBT) transistor technology is presented. The amplifier chain consists of seven unit-cell stages that contain differential-pair common-base HBTs and compact inverted microstrip matching networks. Amplifier operation in differential mode generates a virtual RF ground at a convenient...
A 3-mm-long, 150-mum-wide broad-area quantum cascade laser (lambda = 4.65 mum) with sidewall corrugations produced a maximum-current-limited pulsed output power of 53 W and wall-plug efficiency of 29.4% from two facets at 80 K. The processing was applied to a structure which employed a Ga0.33In0.67As/Al0.64In0.36As strain-compensated double-phonon design with the injection barrier thinned in order...
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