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Monolithic fabrication of a GaInAsP/InP laser (LD) with a monitoring photodiode (PD) is described. LDs and PDs have etched facets fabricated by inclined reactive ion etching (RIE). The etched LD facing facet PD is perpendicular to the junction plane and the etched PD facet facing LD is inclined by 55 degrees to the plane by the 'windward-leeward effect' of the inclined RIE. Therefore, coupling efficiencies...
InGaAsP/InP laser structures with both facets etched are successfully fabricated by angled reactive ion etching (RIE) utilising a TiO2 mask and Cl2-Ar gas. Typical CW threshold current ranges from 20 to 30 mA at 25?C, and light output power from one facet exceeds 25 mW. Results of the aging test at 50?C and 100 mA show no serious degradation for 3200 h.
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