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The effects of hydrogen on the growth kinetics of Si(0 0 1) during gas-source molecular-beam epitaxy from disilane are investigated with kinetic Monte Carlo simulations. The growth model includes the surface decomposition of disilane, which requires four mobile and reactive surface species: Si, H, SiH 2 and SiH 3 . Based on recent reflectance anisotropy measurements, the desorption...
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