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We have studied changes in surface morphology of vicinal Si(111) surfaces with a miscut of 1.3° in the [2 ̄11] direction after Al deposition at elevated temperatures. The clean surface phase separates into a (111)-oriented phase and a stepped phase. Submonolayer Al deposition at 650°C, the normal preparation temperature of the Al/Si(111)-( 3× 3)R30° structure, only induces minor changes in the surface...
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