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Quantum dot structures, where electrons are confined three-dimensionally in the below 10 nm scale, show characteristics quite different from conventional bulk structures. Recent progress in the fabrication technology of silicon nanostructures has made possible observations of novel electrical and optical properties of silicon quantum dots, such as single electron tunneling, ballistic transport, visible...
Recent progress in the fabrication technology of silicon nanostructures has made possible observations of novel electrical and optical properties of silicon quantum dots, such as single electron tunneling, ballistic transport, visible photoluminescence and electron emission. Electron transport and photonic properties of silicon nanocrystals prepared by plasma processes are described with particular...
Broadband variable chromatic dispersion in C-band frequency range is demonstrated using novel nanostructured electro-optic waveguide consisting of low-loss Si3N4 rectangular core and Si/SiO2 two-dimensional photonic-crystal layer controlled by voltage bias
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