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The passivation potential of PECVD SiNx deposited on undiffused p-type Si surfaces is investigated. The influence of post-deposition annealing temperature and the film parameters (refractive index and thickness) on the implied Voc of textured, commercial grade, p-type CZ wafers was studied. Improvement in the implied Voc values of SiNx passivated CZ wafers was observed for two different SiNx films...
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