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The mid-infrared is of great interest for a huge range of applications such as medical and environment sensors, security, defense and astronomy. I will give a broad overview of the different activities recently launched in INL Lyon, in close collaboration with several French and Australian institutions, under the umbrella of “Mid-IR integrated photonics” with a particular focus on novel integrated...
For over 4 decades, the steady increase in switching speed of MOS transistors has been mainly achieved by scaling down the gate oxide thickness, the channel length, and other associated physical dimensions. In recent years, strain engineering to increase the carrier mobility has also been a significant contributor to the improved switching speed. These measures have been able to keep Si as the only...
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