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The semiconductor-passivating layer interfaces, as well as their dielectric properties, play important and very often dominant roles in determining HgCdTe device performance. In this work, photoconductors were fabricated on p-type mid-wave infrared Hg1-xCdxTe material using molecular beam epitaxy (MBE) grown CdTe film as the passivation layer. In order to emphasize the importance of the CdTe passivating...
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