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There are many process steps needed to fabricate semi-conductor devices. In general, the goal of every process is to impact all portions of the wafer identically and great effort is applied to eliminating any non-uniformity. However, it is not always possible to remove all variation, especially to the level required by advanced devices. This is especially true for plasma processes such as CVD and...
For improvement of device yield within a wafer, SEN's MIND system is powerful tool. It is found that one can compensate variations from other manufacturing processes of semiconductor devices and can fabricate the "same" semiconductor devices using the MIND system. "Different dose" ion implantation processes are intentionally given on one wafer by using SEN's MIND system. In this...
In order to compensate the variation from other processes, an intentional non-uniform dosage mapping system has been developed. Modulating both vertical and horizontal scan speed makes it possible to implant in two-dimensional non-uniform dosage even for high-tilt implantation. For zero-degree angle implantation, more complicated non-uniform dosage mapping can be achieved by combining the scan control...
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