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This study reports the effect of different barrier on Cu interconnect performance. A thin “enhancement” layer of Ru or Co film is deposited between a PVD Ta(N) liner barrier and a Cu seed layer to improve copper to barrier adhesion and copper gap fill. With the enhancement layer of either Ru or Co, no void is found in dual damascene structure with very thin seed. The electrical performance is improved...
The combination of self-formed barrier (SFB) and extreme low-k (ELK) dielectric is an attractive candidate for interconnect integration beyond 28nm-node regarding to low RC delay and Cu filling. Attempt is made to understand the formation mechanism of SFB through combinations with various ELK dielectrics in this study. In terms of wiring and dielectric reliabilities, the combination of MnxOy SFB and...
Epitaxial YBa2Cu3O7-delta was formed by processing of laser-ablated, fluorine-free precursor films. The depositions were conducted at room temperature in low oxygen pressure on LaAlO3(LAO) single crystal substrates. Processing was done in the same deposition chamber by heating the precursor film to reaction temperatures of 750-850degC in a reducing gas ambient, and then raising the oxygen pressure...
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