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In this work we present the highest frequency performance reported to date of an AlInN/GaN HEMT with a 2×150 μm configuration. The frequency performance reached was of a measured fT of 107 GHz and an fmax of 89.5 GHz. The device has an IDSS of 1.1 A/mm at a VGS of 0 V, an Imax of 1.3 A/mm at VGS of 1 V, and a gm‐peak of 395 mS/mm. The gate length, LG, was 122 nm and a total barrier thickness, tbar...
We studied submicrometer (LG = 0.15-0.25 ??m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al2O3 passivation. The combination of a low-damage gate-recess technology and the low sheet resistance of the InAlN/AlN/GaN structure resulted in HEMTs with a maximum dc output current density of IDS,max = 1.5 A/mm and a record peak extrinsic transconductance...
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