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In article number 1701838, Nicholas R. Glavin and co‐workers describe the use of a series of flexible gallium nitride radio‐frequency devices for power amplification of wireless signals at high frequencies for future wearable and conformal electronics. The flexible GaN, in this case, is realized through epitaxial lift‐off using a 2D h‐BN release layer and can accommodate strains up to 0.43% with performance...
Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio‐frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high‐frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical‐free transfer to a soft,...
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