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Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a leading candidate for embedded memory applications, with promises of low power, high performance, and non-volatility.
Spin Transfer Torque Magnetic Random Access Memories (STT-MRAM) are based on Magnetic Tunnel Junctions (MTJs) made out of two ferromagnetic electrodes separated by a MgO tunnel barrier.
We present for the first time a fully functional 40 nm perpendicular STT-MRAM macro (1 Mb, ×32/×64 IO) embedded into a foundry standard CMOS logic platform. We achieved target design specifications of 20 ns read access time and 20–100 ns write cycle time without redundancy repair at standard core and IO voltages. The full 1 Mb macro can be switched reliably with write pulse as short as 6 ns, which...
All of the protein products of Turnip crinkle virus (TCV; Tombusviridae, Carmovirus) were tested for their ability to suppress RNA silencing of a reporter gene after transient expression in Agrobacterium-infiltrated Nicotiana benthamiana leaves. Only the capsid protein, P38, showed suppression activity, although this was not obvious when P38 was expressed as part of a TCV infection of the same tissues...
Over the years there has been a continual increase in the rating requirements for metal-clad switchgear. Both the continuous ratings and the interrupting values have been pushed upwards in order to keep pace with the growing needs of industrial and utility electric power systems. Each rating increase has generally led to the need for better insulation for one or more of the following reasons: higher...
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