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Both n-strip on n-bulk and p-strip on n-bulk silicon microstrip detectors have been irradiated at the CERN PS to a fluence of 3x10 14 pcm -2 and their post-irradiation performance compared using fast binary readout electronics. Results are presented for test beam measurements of the efficiency and resolution as a function of bias voltage made at the CERN SPS, and for noise...
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