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Frequency selective surfaces (FSS) have attracted researchers from many subjects for decades for its tempting applications such as for radome radar cross section (RCS) reduction, sub-reflector, et.al. Many studies was focused on different type FSS, such as unit shape, dielectric loading, layers of FSS. And it is of popular consideration that double dielectric loading on both sides of FSS be an ideal...
Transition into High-K (HK) dielectric and Metal-Gate (MG) in advanced logic process has enabled continued technology scaling in support of Moore's law [1–2]. With this, CMOS operating fields have been increasing along with gate dielectric TDDB voltage acceleration factors (VAF). VAF is the most critical reliability parameter used to accurately predict the Gate oxide lifetime (TDDB) at use. This paper...
High-K (HK) and Metal-Gate (MG) transistor reliability is very challenging both from the standpoint of introduction of new materials and requirement of higher field of operation for higher performance. In this paper, key and unique HK+MG intrinsic transistor reliability mechanisms observed on 32nm logic technology generation is presented. We'll present intrinsic reliability similar to or better than...
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