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Fine-grained sleep transistor circuits are demonstrated with 0.12 /spl mu/m 16 b MAC (multiply-accumulate unit). Standby power is reduced by a factor of 5500 at 85/spl deg/C with speed reduction of 5%. Charge recycling reduces the minimum sleep time by 25%. Dynamic power dissipation decreases by 16% activating a fraction of the switch in slow mode. Double switching inhibits power-on glitches and reduces...
Localizing gamma-ray events accurately and performing pileup rejection/correction functions are desirable in positron-emission-tomography (PET) front-end electronics development. Two techniques, the traditional analog integration with charge-sensitive amplifiers and the recent digital integration by using free-running analog-to-digital converters (ADCs), are the typical methods to obtain the event...
MOSFETs with effective channel lengths down to 0.3 ??=m have been realized using x-ray lithography. To determine process parameters for device optimization two dimensional process and device modeling was employed. In addition, ring oscillators with different numbers of stages were fabricated to evaluate the performance of this technology.
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