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As design rule shrinking, it's more challenged to keep the enough capacitance for DRAM device requirement. For deep trench DRAM, one of methods supplied enough capacitance of providing deeper trench. Currently, the trench depth is over 6 mum for the 512M DRAM. In order to meet this stringent requirement, we need to care about not only the profile of deep trench (DT) but also the enough depth. Due...
Current available metrology methods for metal layer line monitoring could include atomic force microscopic (AFM) scanning for trench depth measurement and top-down secondary electron microscope for CD measurement (CD-SEM). However, they both suffer from incomplete information outputs and repeatability issue. Transmission electron microscope (TEM) cross-sections and SEM cross-sections are the two major...
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