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In this work, crack statistics are developed for MOCVD‐grown 12 μm thick GaN on patterned Si substrate for different sizes, trench widths and trench heights of the mesas. Optical microscope is used to obtain the percentage of cracked mesas in order to develop the crack statistics. The crack statistics show that the size and the trench height of the mesas have large effects on the percentage of cracked...
Lead forms elongated islands when grown on vicinal Si(111) surfaces. Polarized infrared transmittance studies have shown a strong anisotropic optical response associated with antenna‐like plasmonic resonances, whose spectral position in the region of 0.25 eV is sensitive to the length of the islands. Reflection anisotropy spectroscopy (RAS) using a photoelastic modulator (PEM) should be more sensitive...
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