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We report low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses of < 1dB/cm at λ=1550nm, < 1.5dB/cm at λ=2080nm and < 2dB/cm at λ = 5.08 μm.
We demonstrate silicon-chip-based instantaneous chromatic dispersion monitoring (GVD) for an ultrahigh bandwidth 640 Gbit/s differential phase-shift keying (DPSK) signal. This monitoring scheme is based on cross-phase modulation in a highly nonlinear silicon nanowire. We show that two-photon absorption and free-carrier-related effects do not compromise the GVD monitoring performance, making our scheme...
We report low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses of < 1dB/cm at λ=1550nm and < 2dB/cm at λ = 5.08 μm.
We demonstrate a silicon nanowire based radio frequency spectrum analyser based on cross-phase modulation. We show that the device is accurate, with cross-chirp from photogenerated free-carriers negligible and measure RF spectra for 640Gbaud on-off-keyed data.
We demonstrate broadband low power supercontinuum generation in arsenic sulphide (As2S3) tapered fiber nanowires with an effective area ~0.8 μm2 and nonlinearity γ = 12,400 W-1 km-1. Simulations showed good agreement between theory and experiment.
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