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The mid-infrared is of great interest for a huge range of applications such as medical and environment sensors, security, defense and astronomy. I will give a broad overview of the different activities recently launched in INL Lyon, in close collaboration with several French and Australian institutions, under the umbrella of “Mid-IR integrated photonics” with a particular focus on novel integrated...
We demonstrate 1st and 2nd order all-optical ultra-high speed temporal integration of complex optical waveforms by using an integrated CMOS compatible four-port micro-ring resonator. The device offers an unprecedented processing speed > 400GHz.
We demonstrate silicon-chip-based instantaneous chromatic dispersion monitoring (GVD) for an ultrahigh bandwidth 640 Gbit/s differential phase-shift keying (DPSK) signal. This monitoring scheme is based on cross-phase modulation in a highly nonlinear silicon nanowire. We show that two-photon absorption and free-carrier-related effects do not compromise the GVD monitoring performance, making our scheme...
We present a dissipative four wave mixing tunable laser based on a integrated CMOS-compatible high-Q nonlinear ring resonator, emitting subpicosecond pulses at 200GHz-repetition rate. Quasi-sinusoidal 800GHz emission regime is also demonstrated.
We present a subpicosecond, 200 GHz-repetition rate, passively mode-locked laser based on high-harmonic four-wave mixing in an integrated CMOS-compatible high-Q nonlinear ring resonator.
We demonstrate an integrated, CMOS compatible, multiple wavelength source based on hyper-parametric oscillation via MI (FWM) gain in a high index doped silica glass ring resonator. We obtain lasing with wavelength spacings from 200 GHz to > 6 THz, with a threshold of 54 mW. This device has promise for telecommunications and on-chip WDM optical interconnects for computing.
This paper describes an ultra-low-power RF transceiver implemented as part of a system-on-chip. The transceiver operates in the 868/915 MHz frequency band using binary FSK modulation at a 45 kbit/s data rate. It achieves -89 dBm receiver sensitivity and -6 dBm transmitter output power while consuming 1.6 mA and 1.8 mA, respectively, from a 1.2 to 1.5 V supply. It is fabricated in 0.13 mum CMOS occupying...
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