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High-quality mid-wave infrared (MWIR) double-layer heterojunction HgCdTe has been grown on 8-inch Si substrates using molecular beam epitaxy. We grew six 8-inch-diameter MWIR HgCdTe wafers on Si substrates and measured within-wafer and wafer-to-wafer variations of key parameters such as cutoff wavelength, HgCdTe thickness, macrodefect density including voids and microvoids, and arsenic doping uniformity...
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