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The density of two dimensional electron gas (2DEG) in the channel of AlGaN/GaN HEMT is often altered by trapped charges on the surface or in the bulk of the heterostructure, limiting the device performance at high frequencies [1][2]. The existing methods, such as photoionization spectroscopy [3], Deep Level Transient Spectroscopy (DLTS) [4] etc., mainly focus on deep level traps in GaN, providing...
<?Pub Dtl?>We have investigated the total ionizing dose (TID) radiation effects in AlGaN/GaN MOS-HEMTs as a function of dose and radiation bias, and compared them with conventional HEMTs. Under 10 keV X-ray irradiation, two distinct regimes of threshold voltage shifts have been revealed: a rapid shift at low doses for both HEMTs and MOS-HEMTs, and...
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