The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Atomic-level simulations have been employed to study the defects and nanoscale disordering induced in 3C-SiC by C, Si and Au ions with energies up to 50 keV. Energetic C and Si ions primarily produce interstitials, vacancies, antisite defects and small defect clusters directly in collision cascades. The overlap of Si cascades produces nanoscale defect clusters. In the case of energetic Au ions, nanoscale...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.