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The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography. The dopant distributions of As, P, and B atoms in a MOSFET structure (gate, gate oxide, channel, source/drain extension, and halo) were obtained. P atoms were segregated at the interface between the poly-Si gate and the gate oxide, and on the grain boundaries...
We have fabricated Silicon-On-Diamond (SOD) substrates on which, for the first time, we integrated n and p Fully Depleted MOSFETs high-K/metal gate down to 200 nm gate length. The devices show excellent electrical characteristics and a 57% improvement of the thermal resistance compared to the co-processed one on standard SOI.
For small capacity rectifier circuits such as those for consumer electronics and appliances, rectifier circuits of the capacitor input type are generally used. The various harmonics generated within such a power system become a serious problem. Various studies to reduce these effects have been presented so far. However, most of these employ switching devices, such as MOSFETs and the like. Removing...
For consumer electronics and appliances, rectifier circuits of the capacitor input type are generally used. The various harmonics generated within such a power system become a serious problem. Various studies to reduce these effects have been presented so far. However, most of these employ switching devices, such as MOSFETs and the like. Removing the need for switching devices renders the systems...
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