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We have studied the thermoelectric properties of porous silicon, a nanostructured, yet single-crystalline form of silicon. Using electrochemical etching, liquid-phase doping, and high-temperature passivation, we show that porous Si can be fabricated such that it has thermoelectric properties superior to bulk Si, for both n- and p-type doping. Hall measurements reveal that the charge carrier mobility...
We present a theoretical many-body analysis of the electron–electron (e–e) inelastic damping rate Γ of electron-like excitations in the Shockley surface state band of Ag(111). It takes into account ab initio band structures for both bulk and surface states. Γ is found to increase more rapidly as a function of surface state energy E than previously reported, thus leading to an improved agreement with...
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