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In the pursuit of devices with reduced temperature-dependent emission wavelengths, TlInGaAsN double quantum well (DQW) structures with different barriers were grown on GaAs substrates by MBE and investigated. Although TlGaAsN barriers gave rise to higher Tl incorporation, as compared to TlGaAs barriers, the presence of lot of dislocations and very rough interfaces reduced the PL characteristics. The...
We have grown polycrystalline GaN on quartz, refractory metal (W, Mo, Ta and Nb) and Si substrates by using plasma-assisted molecular beam epitaxy. It has been found that polycrystalline GaN grown on quartz and refractory metal substrates shows a strong band-edge emission without yellow emission. GaN growth on Si with native oxide produces well c-orientated nanorods exhibiting a low field emission...
Silicon crystallites produced by low-temperature plasma-enhanced chemical vapor deposition technique have been shown to have size-dependent photoluminescent and second harmonic generation responses. The crystalline volume fraction was estimated by Raman spectra and the grain sizes of crystallites were measured by X-ray diffraction. The structural chemical properties of poly-Si films were studied by...
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